Study of (correlated) trap sites in SILC, BTI and RTN in SiON and HKMG devices
E. Bury(IMEC), G. Groeseneken(KU Leuven), B. Kaczer(IMEC), R. Degraeve(IMEC), Tibor Grasser(TU Wien), Naoto Horiguchi(IMEC), Moon Ju Cho(IMEC), Wolfgang Goes(TU Wien)
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