Impact of time dependent dielectric breakdown and stress-induced leakage current on the reliability of high dielectric constant (Ba,Sr)TiO/sub 3/ thin-film capacitors for Gbit-scale DRAMs
Shintaro Yamamichi(NEC (Japan)), Chenming Hu(Semiconductor Manufacturing International (Italy)), Akiko Yamamichi(University of California, Berkeley), Donggun Park(University of California, Berkeley), Tsu-Jae King(University of California, Berkeley)
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