Ultralow sub-500nA operating current high-performance TiN\Al<inf>2</inf>O<inf>3</inf>\HfO<inf>2</inf>\Hf\TiN bipolar RRAM achieved through understanding-based stack-engineering
L. Goux(IMEC), M. Jurczak(IMEC), Dirk J. Wouters(IMEC), Sergiu Clima(IMEC), L. Altimime(IMEC), A. Fantini(IMEC), Y.-Y. Chen(IMEC), B. Govoreanu(IMEC), Geoffrey Pourtois(IMEC), Gouri Sankar Kar(IMEC), J. A. Kittl(IMEC), G. Lorenzo(IMEC), R. Degraeve(IMEC), N. Jossart(IMEC)
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