Leakage current comparison between ultra-thin Ta<sub>2</sub>O<sub>5</sub> films and conventional gate dielectrics
Qiang Lu(Huazhong University of Science and Technology), Chenming Hu(National Yang Ming Chiao Tung University), Chung‐Hsing Chang(Lam Research (Austria)), Chia-Cheng Cheng(Lam Research (Austria)), Tsu-Jae King(University of California, Berkeley), A. Kalnitsky(Texas Instruments (United States)), Sing Pin Tay(Engineering Associates (United States)), Donggun Park(University of California, Berkeley)
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