Experimental and simulation study of the Schottky barrier lowering by substrate doping variation for PtSi Source/Drain SBFETs
Grégory Lousberg(University of Liège), S. Biesemans(IMEC), B. Froment(STMicroelectronics (Switzerland)), A. Lauwers(IMEC), C. Demeurisse(Imec the Netherlands), S. Brus(University of Liège), M.F. Li, A. De Keersgieter(IMEC), H.Y. Yu(IMEC), Muriel DePotter(University of Liège), E. Augendre(IMEC), P. Absil(IMEC), Stefan Kubicek(Austrian Academy of Sciences), B. Degroote(IMEC), K. Anil(IMEC), T. Hoffmann(IMEC), M. Jurczak(IMEC)
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