TiO2/HfO2 Bi-Layer Gate Stacks Grown by Atomic Layer Deposition for Germanium-Based Metal-Oxide-Semiconductor Devices Using GeOxNy Passivation Layer
Qi Xie(ASM International (Belgium)), Christophe Detavernier(Ghent University Hospital), Xin-Ping Qu(Fudan University), Marc Schaekers(IMEC), S. Van den Berghe(Belgian Nuclear Research Centre), Matty Caymax(IMEC), Yu-Long Jiang(Fudan University), Annelies Delabie(IMEC), Dennis Lin(IMEC), Jan Musschoot(Ghent University)
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