Germanium surface passivation and atomic layer deposition of high-<i>k</i>dielectrics—a tutorial review on Ge-based MOS capacitorsQi Xie, Christophe Detavernier, Annelies Delabie et al.|Semiconductor Science and Technology|2012Cited by 155
Ultrathin GeOxNy interlayer formed by <i>in situ</i> NH3 plasma pretreatment for passivation of germanium metal-oxide-semiconductor devicesQi Xie, Christophe Detavernier, Jan Musschoot et al.|Applied Physics Letters|2010Cited by 26
High-Performance Ge MOS Capacitors by $\hbox{O}_{2}$ Plasma Passivation and $\hbox{O}_{2}$ Ambient AnnealingQi Xie, Christophe Detavernier, Marc Schaekers et al.|IEEE Electron Device Letters|2011Cited by 21
TiO2/HfO2 Bi-Layer Gate Stacks Grown by Atomic Layer Deposition for Germanium-Based Metal-Oxide-Semiconductor Devices Using GeOxNy Passivation LayerQi Xie, Christophe Detavernier, Jan Musschoot et al.|Electrochemical and Solid-State Letters|2011Cited by 19
Removable polytetrafluoroethylene template based epitaxy of ferroelectric copolymer thin filmsWei Xia, Guodong Zhu, Qiusong Chen et al.|Applied Surface Science|2017Cited by 12