Ultrathin GeOxNy interlayer formed by <i>in situ</i> NH3 plasma pretreatment for passivation of germanium metal-oxide-semiconductor devicesQi Xie, Christophe Detavernier, Annelies Delabie et al.|Applied Physics Letters|2010Cited by 26
TiO2/HfO2 Bi-Layer Gate Stacks Grown by Atomic Layer Deposition for Germanium-Based Metal-Oxide-Semiconductor Devices Using GeOxNy Passivation LayerQi Xie, Christophe Detavernier, Jan Musschoot et al.|Electrochemical and Solid-State Letters|2011Cited by 19