Electrical signature of the defect associated with gate oxide breakdown

Weidong Zhang(Liverpool John Moores University), R. Degraeve(IMEC), G. Groeseneken(KU Leuven), J. F. Zhang(Liverpool John Moores University), Mo Chang(Liverpool John Moores University), Chengzhi Zhao(Liverpool John Moores University)
IEEE Electron Device Letters
May 1, 2006
10.1109/led.2006.873384
Cited by 24

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