Hole Traps in Silicon Dioxides—Part I: PropertiesJ. F. Zhang, R. Degraeve, Chengzhi Zhao et al.|IEEE Transactions on Electron Devices|2004Cited by 79
Hole-Traps in Silicon Dioxides—Part II: Generation MechanismChengzhi Zhao, R. Degraeve, G. Groeseneken et al.|IEEE Transactions on Electron Devices|2004Cited by 41
An Assessment of the Location of As-Grown Electron Traps in$hboxHfO_2$/HfSiO StacksJ. F. Zhang, Stefan De Gendt, R. Degraeve et al.|IEEE Electron Device Letters|2006Cited by 37
Hydrogen induced positive charge generation in gate oxidesJ. F. Zhang, C.D. Beech, Chengzhi Zhao et al.|Journal of Applied Physics|2001Cited by 31
Electrical signature of the defect associated with gate oxide breakdownWeidong Zhang, R. Degraeve, Chengzhi Zhao et al.|IEEE Electron Device Letters|2006Cited by 24