Oxide Trapping in the InGaAs–$\hbox{Al}_{2} \hbox{O}_{3}$ System and the Role of Sulfur in Reducing the $ \hbox{Al}_{2}\hbox{O}_{3}$ Trap Density
A. Alian(IMEC), Marc Heyns(IMEC), Guy Brammertz(IMEC), Matty Caymax(IMEC), R. Degraeve(IMEC), Marc Meuris(IMEC), Wei Wang(Peking University), Dennis Lin(IMEC), Clément Merckling(IMEC), K. De Meyer(IMEC), Moonju Cho(IMEC)
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