Characterization of GeSn materials for future Ge pMOSFETs source/drain stressorsBenjamin Vincent, Roger Loo, J. Demeulemeester et al.|Microelectronic Engineering|2010Cited by 105
Epitaxial staircase structure for the calibration of electrical characterization techniquesTrudo Clarysse, G. Neubauer, Matty Caymax et al.|Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena|1998Cited by 70
Ge1−Sn stressors for strained-Ge CMOSShotaro Takeuchi, Shigeaki Zaima, Osamu Nakatsuka et al.|Solid-State Electronics|2011Cited by 34