High-Performance Ge MOS Capacitors by $\hbox{O}_{2}$ Plasma Passivation and $\hbox{O}_{2}$ Ambient Annealing
Qi Xie(ASM International (Belgium)), Christophe Detavernier(Ghent University Hospital), Marc Schaekers(IMEC), Matty Caymax(IMEC), Shaoren Deng(Ghent University), Yu-Long Jiang(Fudan University), Dennis Lin(IMEC), Annelies Delabie(IMEC), Davy Deduytsche(Ghent University), Xin-Ping Qu(Fudan University)
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