Germanium surface passivation and atomic layer deposition of high-<i>k</i>dielectrics—a tutorial review on Ge-based MOS capacitorsQi Xie, Christophe Detavernier, Shaoren Deng et al.|Semiconductor Science and Technology|2012Cited by 155
Implementing TiO2 as gate dielectric for Ge-channel complementary metal-oxide-semiconductor devices by using HfO2/GeO2 interlayerQi Xie, Christophe Detavernier, Davy Deduytsche et al.|Applied Physics Letters|2010Cited by 41
Effective reduction of fixed charge densities in germanium based metal-oxide-semiconductor devicesShaoren Deng, Christophe Detavernier, Qi Xie et al.|Applied Physics Letters|2011Cited by 31
Effective Electrical Passivation of Ge(100) for HfO2 Gate Dielectric Layers Using O2 PlasmaQi Xie, Christophe Detavernier, Annelies Delabie et al.|Electrochemical and Solid-State Letters|2011Cited by 21
High-Performance Ge MOS Capacitors by $\hbox{O}_{2}$ Plasma Passivation and $\hbox{O}_{2}$ Ambient AnnealingQi Xie, Christophe Detavernier, Shaoren Deng et al.|IEEE Electron Device Letters|2011Cited by 21