Materials and electrical characterization of molecular beam deposited CeO2 and CeO2/HfO2 bilayers on germanium
D.P. Brunco(Imec the Netherlands), M. M. Heyns(IMEC), Michel Houssa(IMEC), Chao Zhao, Thierry Conard(IMEC), A. Dimoulas(National Centre of Scientific Research "Demokritos"), Matty Caymax(IMEC), Florence Bellenger(IMEC), Marc Meuris(IMEC), Nikos Boukos(National Centre of Scientific Research "Demokritos"), Koen Martens(IMEC)
Cited by 50
Related Papers
Electrical properties of high-κ gate dielectrics: Challenges, current issues, and possible solutions
|Materials Science and Engineering R Reports|2006|278
Effective electrical passivation of Ge(100) for high-k gate dielectric layers using germanium oxide
|Applied Physics Letters|2007|271
Germanium MOSFET Devices: Advances in Materials Understanding, Process Development, and Electrical Performance
|Journal of The Electrochemical Society|2008|267
High-k dielectrics for future generation memory devices (Invited Paper)
|Microelectronic Engineering|2009|252
Undoped and <i>in-situ</i> B doped GeSn epitaxial growth on Ge by atmospheric pressure-chemical vapor deposition
|Applied Physics Letters|2011|189