Intrinsic Switching Behavior in HfO2 RRAM by Fast Electrical Measurements on Novel 2R Test Structures
A. Fantini(IMEC), M. Jurczak(IMEC), L. Altimime(IMEC), L. Pantisano(IMEC), R. Degraeve(IMEC), B. Govoreanu(IMEC), Gouri Sankar Kar(IMEC), J. A. Kittl(IMEC), Y.-Y. Chen(IMEC), L. Goux(IMEC), Dirk J. Wouters(IMEC)
Cited by 70
Related Papers
Ultrathin (<4 nm) SiO2 and Si–O–N gate dielectric layers for silicon microelectronics: Understanding the processing, structure, and physical and electrical limits
|Journal of Applied Physics|2001|772
New insights in the relation between electron trap generation and the statistical properties of oxide breakdown
|IEEE Transactions on Electron Devices|1998|647
Origin of the threshold voltage instability in SiO<sub>2</sub>/HfO<sub>2</sub> dual layer gate dielectrics
|IEEE Electron Device Letters|2003|360