Towards high mobility GeSn channel nMOSFETs: Improved surface passivation using novel ozone oxidation method
Shashank Gupta(Stanford University), Krishna C. Saraswat(Stanford University), Bin Yang(Economic Research Institute), Federica Gencarelli(IMEC), Jyi-Tsong Lin(National Sun Yat-sen University), R. Chen(Stanford University), Blanka Magyari-Köpe(Stanford University), Matty Caymax(IMEC), H. Bender(IMEC), Yoshio Nishi(Stanford University), Benjamin Vincent(IMEC), Olivier Richard(IMEC), Dennis Lin(IMEC), J. Dekoster(IMEC)
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