Towards high mobility GeSn channel nMOSFETs: Improved surface passivation using novel ozone oxidation methodShashank Gupta, Krishna C. Saraswat, R. Chen et al.|Unknown|2012Cited by 38
GeSn channel nMOSFETs: Material potential and technological outlookShubhanshu Gupta, Krishna C. Saraswat, Benjamin Vincent et al.|Unknown|2012Cited by 31
(Invited) GeSn Channel n and p MOSFETsSuyog Gupta, Krishna C. Saraswat, Yoshio Nishi et al.|ECS Transactions|2013Cited by 18