Thin epitaxial Si films as a passivation method for Ge(100): Influence of deposition temperature on Ge surface segregation and the high-k/Ge interface qualityFrederik Leys, Marc Heyns, Renaud Bonzom et al.|Materials Science in Semiconductor Processing|2006Cited by 53
Hafnium oxide films by atomic layer deposition for high-κ gate dielectric applications: Analysis of the density of nanometer-thin filmsRiikka L. Puurunen, Marc Heyns, Annelies Delabie et al.|Applied Physics Letters|2005Cited by 44
H 2 S exposure of a (100)Ge surface: Evidences for a (2×1) electrically passivated surfaceMichel Houssa, M. M. Heyns, Daniël Nelis et al.|Applied Physics Letters|2007Cited by 34
Integration of high-k gate dielectrics - Wet etch, cleaning and surface conditioningStefan De Gendt, Marc Heyns, Harald Kraus et al.|Unknown|2004Cited by 0