First-principles simulation of oxygen diffusion in HfOx: Role in the resistive switching mechanism
Sergiu Clima(IMEC), Geoffrey Pourtois(IMEC), Maarten Mees(IMEC), Y. Y. Chen(IMEC), R. Degraeve(IMEC), Stefan De Gendt(Imec the Netherlands), B. Govoreanu(IMEC), Kiroubanand Sankaran(IMEC), M. Jurczak(IMEC)
Cited by 97
Related Papers
Ultrathin (<4 nm) SiO2 and Si–O–N gate dielectric layers for silicon microelectronics: Understanding the processing, structure, and physical and electrical limits
|Journal of Applied Physics|2001|772
New insights in the relation between electron trap generation and the statistical properties of oxide breakdown
|IEEE Transactions on Electron Devices|1998|647
Origin of the threshold voltage instability in SiO<sub>2</sub>/HfO<sub>2</sub> dual layer gate dielectrics
|IEEE Electron Device Letters|2003|360