25% drive current improvement for p-type multiple gate FET (MuGFET) devices by the introduction of recessed Si/sub 0.8/Ge/sub 0.2/ in the source and drain regions.
Peter Verheyen(IMEC), S. Biesemans(IMEC), M. Jurczak(IMEC), Yong Sik Yim(Samsung (United States)), Frederik Leys(IMEC), Denis Shamiryan(IMEC), Nadine Collaert(IMEC), Matty Caymax(IMEC), A. De Keersgieter(IMEC), Geert Eneman(Research Foundation - Flanders), P. Absil(IMEC), M. W. Goodwin(Texas Instruments (United States)), R. Rooyackers(IMEC), Roger Loo(IMEC), K. De Meyer(IMEC), Abhisek Dixit(IMEC)
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