Ultrathin GeOxNy interlayer formed by <i>in situ</i> NH3 plasma pretreatment for passivation of germanium metal-oxide-semiconductor devices
Qi Xie(ASM International (Belgium)), Christophe Detavernier(Ghent University Hospital), Xin-Ping Qu(Fudan University), Marc Schaekers(IMEC), S. Van den Berghe(Belgian Nuclear Research Centre), Matty Caymax(IMEC), Junhu Liu(Belgian Nuclear Research Centre), Annelies Delabie(IMEC), Yu-Long Jiang(Fudan University), Jan Musschoot(Ghent University)
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