Graded-base Si/Si/sub 1-x/Ge/sub x//Si heterojunction bipolar transistors grown by rapid thermal chemical vapor deposition with near-ideal electrical characteristicsJames C. Sturm, C. W. Magee, E.J. Prinz|IEEE Electron Device Letters|1991Cited by 58
Suppression of boron transient enhanced diffusion in SiGe heterojunction bipolar transistors by carbon incorporationL. Lanzerotti, C. W. Magee, E.A. Stach et al.|Applied Physics Letters|1997Cited by 54
Base resistance and effective bandgap reduction in n-p-n Si/Si/sub 1-x/Ge/sub x//Si HBTs with heavy base dopingŽ. Matutinović-Krstelj, C. W. Magee, V. Venkataraman et al.|IEEE Transactions on Electron Devices|1996Cited by 53
Growth and photoluminescence of high quality SiGeC random alloys on silicon substratesC. W. Liu, D. J. Eaglesham, C. W. Magee et al.|Journal of Applied Physics|1996Cited by 32