The effects of base dopant outdiffusion and undoped Si/sub 1-x/Ge/sub x/ junction spacer layers in Si/Si/sub 1-x/Ge/sub x//Si heterojunction bipolar transistorsE.J. Prinz, James C. Sturm, P.M. Garone et al.|IEEE Electron Device Letters|1991Cited by 115
Growth of Si1−<i>x</i>Ge<i>x</i> by rapid thermal chemical vapor deposition and application to heterojunction bipolar transistorsJames C. Sturm, Hari C. Manoharan, Peter Schwartz et al.|Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena|1991Cited by 95
High quantum efficiency photoluminescence from localized excitons in Si1−<i>x</i>Ge<i>x</i>L. C. Lenchyshyn, D. C. Houghton, M. L. W. Thewalt et al.|Applied Physics Letters|1992Cited by 87
Graded-base Si/Si/sub 1-x/Ge/sub x//Si heterojunction bipolar transistors grown by rapid thermal chemical vapor deposition with near-ideal electrical characteristicsJames C. Sturm, C. W. Magee, E.J. Prinz|IEEE Electron Device Letters|1991Cited by 58
Current gain-Early voltage products in heterojunction bipolar transistors with nonuniform base bandgapsE.J. Prinz, James C. Sturm|IEEE Electron Device Letters|1991Cited by 58