Si/Si/sub 1-x-y/Ge<sub>x</sub>C<sub>y</sub>/Si heterojunction bipolar transistorsL. Lanzerotti, D. Theodore, James C. Sturm et al.|IEEE Electron Device Letters|1996Cited by 79
Suppression of boron transient enhanced diffusion in SiGe heterojunction bipolar transistors by carbon incorporationL. Lanzerotti, C. W. Magee, E.A. Stach et al.|Applied Physics Letters|1997Cited by 54
Optical and electrical properties of Si1−x−yGexCy thin films and devicesA. St. Amour, James C. Sturm, L. Lanzerotti et al.|Thin Solid Films|1997Cited by 13
Quantitative Measurement of Reduction of Boron Diffusion by Substitutional Carbon IncorporationMalcolm S. Carroll, James C. Sturm, L. Lanzerotti|MRS Proceedings|1998Cited by 11