The precipitation of Fe at the Si–SiO2 interfaceJ. Wong‐Leung, J. S. Williams, J. M. Poate et al.|Journal of Applied Physics|1998Cited by 45
Proximity gettering of Au to ion beam induced defects in siliconJ. Wong‐Leung, J. M. Poate, D. J. Eaglesham et al.|Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms|1995Cited by 36
Diffusion and transient trapping of metals in siliconJ. Wong‐Leung, D. J. Eaglesham, J. S. Williams et al.|Physical review. B, Condensed matter|1999Cited by 31
The role of oxygen on the stability of gettering of metals to cavities in siliconJ. S. Williams, D. C. Jacobson, M. Conway et al.|Applied Physics Letters|1999Cited by 25
Defect Trapping and Precipitation Processes During Annealing of Cu and Au Implanted SiJ. Wong‐Leung, D. J. Eaglesham, E. Nygren et al.|MRS Proceedings|1994Cited by 4