Hole mobility enhancement in MOS-gated Ge/sub x/Si/sub 1-x//Si heterostructure inversion layersP.M. Garone, James C. Sturm, V. Venkataraman|IEEE Electron Device Letters|1992Cited by 104
Base resistance and effective bandgap reduction in n-p-n Si/Si/sub 1-x/Ge/sub x//Si HBTs with heavy base dopingŽ. Matutinović-Krstelj, C. W. Magee, E.J. Prinz et al.|IEEE Transactions on Electron Devices|1996Cited by 53
Alloy scattering limited transport of two-dimensional carriers in strained Si1−<i>x</i>Ge<i>x</i> quantum wellsV. Venkataraman, James C. Sturm, C. W. Liu|Applied Physics Letters|1993Cited by 35
Post-outburst phase of McNeil's nebula (V1647 Orionis)D. K. Ojha, V. Venkataraman, S. K. Ghosh et al.|Monthly Notices of the Royal Astronomical Society|2006Cited by 23
Symmetric Si/Si1−<i>x</i>Ge<i>x</i> two-dimensional hole gases grown by rapid thermal chemical vapor depositionV. Venkataraman, James C. Sturm, Peter Schwartz|Applied Physics Letters|1991Cited by 19