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Vacancy engineering for ultra-shallow junction formationR. Gwilliam, Andrew J. Smith, N. E. B. Cowern et al.|Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms|2007Cited by 5
Junction Stability of B Doped Layers in SOI Formed with Optimized Vacancy Engineering ImplantsAndrew J. Smith, Mario Barozzi, N. E. B. Cowern et al.|AIP conference proceedings|2006Cited by 3
Interaction of the end of range defect band with the upper buried oxide interface for B and BF2 implants in Si and silicon on insulator with and without preamorphizing implantM. Kah, K.J. Kirkby, Andrew J. Smith et al.|Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena|2008Cited by 1