Junction Stability of B Doped Layers in SOI Formed with Optimized Vacancy Engineering Implants
Andrew J. Smith(Intel (United States)), Mario Barozzi(Fondazione Bruno Kessler), B.J. Sealy(University of Surrey), R. Gwilliam(University of Surrey), M. Bersani(Fondazione Bruno Kessler), S. Gennaro(University of Surrey), E. J. H. Collart(University of Surrey), N. E. B. Cowern(University of Surrey), B. Colombeau, D. Giubertoni(Fondazione Bruno Kessler)
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