Vacancy-engineering implants for high boron activation in silicon on insulator
Andrew J. Smith(Intel (United States)), Mario Barozzi(Fondazione Bruno Kessler), B.J. Sealy(University of Surrey), R. Gwilliam(University of Surrey), N. E. B. Cowern(University of Surrey), M. Bersani(University of Surrey), S. Gennaro(University of Surrey), E. J. H. Collart(University of Surrey), B. Colombeau, D. Giubertoni(Fondazione Bruno Kessler)
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