Interaction of the end of range defect band with the upper buried oxide interface for B and BF2 implants in Si and silicon on insulator with and without preamorphizing implant
M. Kah(University of Surrey), K.J. Kirkby(Manchester Academic Health Science Centre), R.P. Webb(University of Surrey), James J. Sharp(University of Surrey), Andrew J. Smith(Intel (United States)), R. Gwilliam(University of Surrey), S. H. Yeong(University of Surrey), B. Colombeau, J. J. Hamilton(University of Surrey)
Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena
January 1, 2008
Cited by 1
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