Electrical characterization of the threshold fluence for extended defect formation in p-type silicon implanted with MeV Si ionsS. Fatima, C. Jagadish, J. Wong‐Leung et al.|Applied Physics Letters|1998Cited by 21
Effect of ion mass on the evolution of extended defects during annealing of MeV ion-implanted <i>p</i>-type SiS. Fatima, C. Jagadish, John Fitz Gerald et al.|Applied Physics Letters|1999Cited by 19
Transmission electron microscopy characterization of secondary defects created by MeV Si, Ge, and Sn implantation in siliconJ. Wong‐Leung, D. J. H. Cockayne, Chih‐Lung Chou et al.|Journal of Applied Physics|2000Cited by 10
Effect of Implant Temperature on Extended Defects Craeted by Ion Implantation in SiliconJ. Wong‐Leung, John FitzGerald, S. Fatima et al.|Defect and diffusion forum/Diffusion and defect data, solid state data. Part A, Defect and diffusion forum|2000Cited by 1
Comparative study of the electrical and structural characterization of the sub-threshold damage in n- and p-type Si implanted with MeV ionsS. Fatima, C. Jagadish, J. Wong‐Leung et al.|Unknown|2002Cited by 1