Electrical characterization of the threshold fluence for extended defect formation in p-type silicon implanted with MeV Si ionsS. Fatima, C. Jagadish, J. Wong‐Leung et al.|Applied Physics Letters|1998Cited by 21
Effect of ion mass on the evolution of extended defects during annealing of MeV ion-implanted <i>p</i>-type SiS. Fatima, C. Jagadish, J. Wong‐Leung et al.|Applied Physics Letters|1999Cited by 19
Characterisation of the Subthreshold Damage in MeV Ion Implanted <sub>p</sub> SiShabih Fatima, C. Jagadish, J. Wong‐Leung et al.|MRS Proceedings|1998Cited by 0
Effect of implant temperature on extended defects created by ion implantation in siliconJ. Wong‐Leung, John Fitz Gerald, S. Fatima et al.|ANU Open Research (Australian National University)|2000Cited by 0