Electrical characterization of the threshold fluence for extended defect formation in p-type silicon implanted with MeV Si ions
S. Fatima(Australian National University), C. Jagadish(Australian National University), J. Wong‐Leung(Australian National University), John Fitz Gerald(Australian National University)
Cited by 21
Related Papers
Electron-pinned defect-dipoles for high-performance colossal permittivity materials
|Nature Materials|2013|1.1k
Phase Perfection in Zinc Blende and Wurtzite III−V Nanowires Using Basic Growth Parameters
|Nano Letters|2010|477
Mechanical deformation of single-crystal ZnO
|Applied Physics Letters|2002|271
Mechanical deformation in silicon by micro-indentation
|Journal of materials research/Pratt's guide to venture capital sources|2001|259