Ion-implantation-induced extended defect formation in (0001) and<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mrow><mml:mo>(</mml:mo><mml:mn>11</mml:mn><mml:mover accent="true"><mml:mn>2</mml:mn><mml:mo stretchy="false">¯</mml:mo></mml:mover><mml:mn>0</mml:mn><mml:mo>)</mml:mo></mml:mrow></mml:math><mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mrow><mml:mn>4</mml:mn><mml:mi>H</mml:mi><mml:mtext>−</mml:mtext><mml:mi>SiC</mml:mi></mml:mrow></mml:math>J. Wong‐Leung, D. J. H. Cockayne, Margareta K. Linnarsson et al.|Physical Review B|2005Cited by 37
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