Study of Multi-level Characteristics for 3D Vertical Resistive Switching MemoryYue Bai, He Qian, Huaqiang Wu et al.|Scientific Reports|2014Cited by 123
Study of conduction and switching mechanisms in Al/AlOx/WOx/W resistive switching memory for multilevel applicationsYe Zhang, He Qian, Huaqiang Wu et al.|Applied Physics Letters|2013Cited by 106
Metallic to hopping conduction transition in Ta2O5−x/TaOy resistive switching deviceYe Zhang, He Qian, Ning Deng et al.|Applied Physics Letters|2014Cited by 99
A theoretical model for metal–graphene contact resistance using a DFT–NEGF methodXiang Ji, Zhiping Yu, Jinyu Zhang et al.|Physical Chemistry Chemical Physics|2013Cited by 81
Resistive Switching Performance Improvement of ${\rm Ta}_{2}{\rm O}_{5-x}/{\rm TaO}_{y}$ Bilayer ReRAM Devices by Inserting ${\rm AlO}_{\delta}$ Barrier LayerHuaqiang Wu, He Qian, Xinyi Li et al.|IEEE Electron Device Letters|2013Cited by 62