Metallic to hopping conduction transition in Ta2O5−x/TaOy resistive switching deviceYe Zhang, He Qian, Jinyu Zhang et al.|Applied Physics Letters|2014Cited by 99
A theoretical model for metal–graphene contact resistance using a DFT–NEGF methodXiang Ji, Zhiping Yu, He Qian et al.|Physical Chemistry Chemical Physics|2013Cited by 81
Double-Balanced Graphene Integrated Mixer with Outstanding LinearityHongming Lyu, He Qian, Zhiping Yu et al.|Nano Letters|2015Cited by 42
Atomistic study of dynamics for metallic filament growth in conductive-bridge random access memoryShengjun Qin, Zhiping Yu, Zhan Liu et al.|Physical Chemistry Chemical Physics|2015Cited by 39
Deep-submicron Graphene Field-Effect Transistors with State-of-Art fmaxHongming Lyu, He Qian, Qi Lu et al.|Scientific Reports|2016Cited by 31