Study of conduction and switching mechanisms in Al/AlOx/WOx/W resistive switching memory for multilevel applications
Ye Zhang(Hunan University of Traditional Chinese Medicine), He Qian(University of Science and Technology of China), Zhiping Yu(Beijing Microelectronics Technology Institute), Jinyu Zhang(GlobalFoundries (United States)), Huaqiang Wu(Beijing Advanced Sciences and Innovation Center), An Chen(Zhejiang University of Technology), Yue Bai(Beijing Microelectronics Technology Institute)
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