Resistive Switching Performance Improvement of ${\rm Ta}_{2}{\rm O}_{5-x}/{\rm TaO}_{y}$ Bilayer ReRAM Devices by Inserting ${\rm AlO}_{\delta}$ Barrier Layer

Huaqiang Wu(Beijing Advanced Sciences and Innovation Center), He Qian(University of Science and Technology of China), Feiyang Huang(Institute of Microelectronics), Xinyi Li(Institute of Microelectronics), Minghao Wu(Institute of Microelectronics), Zhiping Yu(Beijing Microelectronics Technology Institute)
IEEE Electron Device Letters
November 19, 2013
10.1109/led.2013.2288311
Cited by 62

Related Papers

Fully hardware-implemented memristor convolutional neural network
|Nature|2020|2.2k
Face classification using electronic synapses
|Nature Communications|2017|909
Neuro-inspired computing chips
|Nature Electronics|2020|886
A compute-in-memory chip based on resistive random-access memory
|Nature|2022|882
Bridging Biological and Artificial Neural Networks with Emerging Neuromorphic Devices: Fundamentals, Progress, and Challenges
|Advanced Materials|2019|830