A Proposal of a Forming-Free Resistive Switching Memory based on Breakdown and Anodic Reoxidation of thin SiO2 on NiSi2 Electrode using CeOx Buffer LayerSholihul Hadi Mokhammad, HIROSHI IWAI, unknown unknown et al.|Institutional Repositories DataBase (IRDB)|2013Cited by 0
Determination of oxide traps distribution in high-k/InGaAs MOS capacitor by capacitance-voltage measurementChun Meng Dou, H Iwai, Chunmeng Dou et al.|Institutional Repositories DataBase (IRDB)|2014Cited by 0
Influence electrode materials on CeOx based resistive switching真一 叶, HIROSHI IWAI, Shinichi Kano et al.|Institutional Repositories DataBase (IRDB)|2013Cited by 0
Influence of Electrode Material for CaOx Based Resistive SwitchingChun Meng Dou, H Iwai, Nobuyuki Sugii et al.|Institutional Repositories DataBase (IRDB)|2012Cited by 0
Influence of Structural Parameters on Electrical Characteristics of Schottky Tunneling Field-Effect Transistor and Its Scalability研 呉, HIROSHI IWAI, Chunmeng Dou et al.|Institutional Repositories DataBase (IRDB)|2013Cited by 0