Resistive switching behavior of a CeO2 based ReRAM cell incorporated with Si buffer layerChunmeng Dou, Hiroshi Iwai, Kuniyuki Kakushima et al.|Microelectronics Reliability|2011Cited by 45
Influence of Structural Parameters on Electrical Characteristics of Schottky Tunneling Field-Effect Transistor and Its ScalabilityYan Wu, Hiroshi Iwai, Chunmeng Dou et al.|Japanese Journal of Applied Physics|2013Cited by 6
Characterization of interface state density of three-dimensional Si nanostructure by charge pumping measurementChunmeng Dou, Hiroshi Iwai, Tomoya Shoji et al.|Microelectronics Reliability|2013Cited by 5
Resistive Switching Behaviors of ReRAM Having W/CeO<sub>2</sub>/Si/TiN StructuresChunmeng Dou, Hiroshi Iwai, Kazuo Tsutsui et al.|ECS Transactions|2011Cited by 2
Influence of Electrode Materials on CeO<sub>x</sub> Based Resistive SwitchingS. Kano, Hiroshi Iwai, Chunmeng Dou et al.|ECS Transactions|2012Cited by 1