Influence of Structural Parameters on Electrical Characteristics of Schottky Tunneling Field-Effect Transistor and Its Scalability

研呉, HIROSHI IWAI, Nobuyuki Sugii(Tokyo Institute of Technology), 信之杉井, Chunmeng Dou(Chinese Academy of Sciences), 邦之角嶋, 好則片岡, Takeo Hattori(Tokyo Institute of Technology), Kuniyuki Kakushima, KAZUO TSUTSUI, Akira Nishiyama, アヘメトパールハット, Keisaku Yamada, 一生筒井, 洋岩井, 健治大毛利, KENJI NATORI, 彰西山, 研二名取, 啓作山田, 健雄服部

Institutional Repositories DataBase (IRDB)

April 1, 2013

Cited by 0

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