A Proposal of a Forming-Free Resistive Switching Memory based on Breakdown and Anodic Reoxidation of thin SiO2 on NiSi2 Electrode using CeOx Buffer Layer
Sholihul Hadi Mokhammad, HIROSHI IWAI(Panasonic (Japan)), 信之 杉井, Chunmeng Dou(Chinese Academy of Sciences), 真一 叶, 好則 片岡, Kuniyuki Kakushima, Shinichi Kano, KAZUO TSUTSUI, 邦之 角嶋, Akira Nishiyama, Hitoshi Wakabayashi, アヘメト パールハット, unknown unknown, 一生 筒井, 洋 岩井, 整 若林, Kenji Natori, 研二 名取, 彰 西山, Nobuyuki Sugii(Tokyo Institute of Technology)
Institutional Repositories DataBase (IRDB)
January 1, 2013
Cited by 0
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