A Proposal of a Forming-Free Resistive Switching Memory based on Breakdown and Anodic Reoxidation of thin SiO2 on NiSi2 Electrode using CeOx Buffer LayerSholihul Hadi Mokhammad, HIROSHI IWAI, unknown unknown et al.|Institutional Repositories DataBase (IRDB)|2013Cited by 0
Influence electrode materials on CeOx based resistive switching真一 叶, HIROSHI IWAI, Shinichi Kano et al.|Institutional Repositories DataBase (IRDB)|2013Cited by 0
希土類酸化物(CeOX)を用いたMIM構造の抵抗スイッチング特性真一 叶, HIROSHI IWAI, Shinichi Kano et al.|Institutional Repositories DataBase (IRDB)|2011Cited by 0
Impact of metal electrode material on resistive swirching properties of Ce oxides真一 叶, HIROSHI IWAI, 信之 杉井 et al.|Institutional Repositories DataBase (IRDB)|2012Cited by 0
Transient Switching Characteristics of Ce-oxide Resistive Switching Devices真一 叶, HIROSHI IWAI, Shinichi Kano et al.|Institutional Repositories DataBase (IRDB)|2013Cited by 0