Well-resolved band-edge photoluminescence of excitons confined in strained<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mrow><mml:msub><mml:mrow><mml:mi mathvariant="normal">Si</mml:mi></mml:mrow><mml:mrow><mml:mn>1</mml:mn><mml:mi mathvariant="normal">−</mml:mi><mml:mi mathvariant="italic">x</mml:mi></mml:mrow></mml:msub></mml:mrow></mml:math><mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mrow><mml:msub><mml:mrow><mml:mi mathvariant="normal">Ge</mml:mi></mml:mrow><mml:mrow><mml:mi mathvariant="italic">x</mml:mi></mml:mrow></mml:msub></mml:mrow></mml:math>quantum wellsJames C. Sturm, D. C. Houghton, Hari C. Manoharan et al.|Physical Review Letters|1991Cited by 296
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Room-temperature 1.3 μm electroluminescence from strained Si1−<i>x</i>Ge<i>x</i>/Si quantum wellsQ. Mi, M. L. W. Thewalt, X. Xiao et al.|Applied Physics Letters|1992Cited by 68
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