Defect-free band-edge photoluminescence and band gap measurement of pseudomorphic Si1− <i>x</i> − <i>y</i> Ge <i>x</i> C <i>y</i> alloy layers on Si (100)A. St. Amour, M. L. W. Thewalt, C. W. Liu et al.|Applied Physics Letters|1995Cited by 104
Si/Si/sub 1-x-y/Ge<sub>x</sub>C<sub>y</sub>/Si heterojunction bipolar transistorsL. Lanzerotti, D. Theodore, James C. Sturm et al.|IEEE Electron Device Letters|1996Cited by 79
Co silicide formation on SiGeC/Si and SiGe/Si layersR. A. Donaton, James C. Sturm, Karen Maex et al.|Applied Physics Letters|1997Cited by 61
The effect of carbon on the valence band offset of compressively strained Si1−x−yGexCy/(100) Si heterojunctionsC. L. Chang, James C. Sturm, A. St. Amour|Applied Physics Letters|1997Cited by 34
Growth and photoluminescence of high quality SiGeC random alloys on silicon substratesC. W. Liu, D. J. Eaglesham, A. St. Amour et al.|Journal of Applied Physics|1996Cited by 32