The effects of base dopant outdiffusion and undoped Si/sub 1-x/Ge/sub x/ junction spacer layers in Si/Si/sub 1-x/Ge/sub x//Si heterojunction bipolar transistorsE.J. Prinz, James C. Sturm, Peter Schwartz et al.|IEEE Electron Device Letters|1991Cited by 115
Quantum confinement effects in strained silicon-germanium alloy quantum wellsX. Xiao, Peter Fejes, James C. Sturm et al.|Applied Physics Letters|1992Cited by 69
Room-temperature 1.3 μm electroluminescence from strained Si1−<i>x</i>Ge<i>x</i>/Si quantum wellsQ. Mi, M. L. W. Thewalt, James C. Sturm et al.|Applied Physics Letters|1992Cited by 68
Silicide/strained Si/sub 1-x/Ge/sub x/ Schottky-barrier infrared detectorsX. Xiao, F. V. Shallcross, James C. Sturm et al.|IEEE Electron Device Letters|1993Cited by 62
Photoluminescence from electron-hole plasmas confined in Si/Si1−<i>x</i>Ge<i>x</i>/Si quantum wellsX. Xiao, M. L. W. Thewalt, C. W. Liu et al.|Applied Physics Letters|1992Cited by 60