Effect of an ultrathin SiO2 interfacial layer on the hysteretic current–voltage characteristics of CeOx-based metal–insulator–metal structures
E. Miranda(Universitat Autònoma de Barcelona), Hiroshi Iwai(Kyoto University), Kuniyuki Kakushima(Tokyo Institute of Technology), S. Kano(Tokyo Institute of Technology), J. Suñé(Universitat Autònoma de Barcelona), Chunmeng Dou(Chinese Academy of Sciences)
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