A Proposal of a Forming-Free Resistive Switching Memory based on Breakdown and Anodic Reoxidization of thin SiO2 on NiSi2 Electrode using CeOx Buffer Layer
Mokh. Sholihul Hadi(Tokyo Institute of Technology), Nobuyuki Sugii(Tokyo Institute of Technology), Yuki Kataoka(Kyoto University), Hitoshi Wakabayashi(Tokyo Institute of Technology), Akira Nishiyama(Kagawa University), S. Kano(Tokyo Institute of Technology), Chunmeng Dou(Chinese Academy of Sciences), Kazuo Tsutsui(Tokyo Institute of Technology), Hiroshi Iwai(Kyoto University), Kuniyuki Kakushima(Tokyo Institute of Technology), Parhat Ahmet(National Institute for Materials Science), Kenji Natori(Chiba University)
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