Silicon vapor phase epitaxial growth catalysis by the presence of germaneP.M. Garone, B. J. Wilkens, James C. Sturm et al.|Applied Physics Letters|1990Cited by 117
The effects of base dopant outdiffusion and undoped Si/sub 1-x/Ge/sub x/ junction spacer layers in Si/Si/sub 1-x/Ge/sub x//Si heterojunction bipolar transistorsE.J. Prinz, James C. Sturm, X. Xiao et al.|IEEE Electron Device Letters|1991Cited by 115
Growth of Si1−<i>x</i>Ge<i>x</i> by rapid thermal chemical vapor deposition and application to heterojunction bipolar transistorsJames C. Sturm, Hari C. Manoharan, E.J. Prinz et al.|Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena|1991Cited by 95
High quantum efficiency photoluminescence from localized excitons in Si1−<i>x</i>Ge<i>x</i>L. C. Lenchyshyn, D. C. Houghton, Peter Schwartz et al.|Applied Physics Letters|1992Cited by 87
Silicon temperature measurement by infrared transmission for rapid thermal processing applicationsJames C. Sturm, P.M. Garone, Peter Schwartz|Applied Physics Letters|1990Cited by 39